Dr. Prajoon P.

Dr Prajoon P

Associate Professor

 

Degree Area University/Institution Year
Ph.D Semiconductor Device Modelling(ECE) Karunya Institute of Technology and Sciences 2017
M.Tech(PG) VLSI Design Karunya Institute of Technology and Sciences 2014
AMIE (UG) Electronics and Communication EngineeringÈ The Institution of Engineers (India) 2007
Diploma Electronics and Instrumentation Engineering Government Poly-technique College, Mattannur. 2004

Teaching Experience : 6 Years

Industry Experiance : 5 Years

From To Name of Institution/Industry Designation
4/11/2020 Till Date Jyothi Engineering College Associate Professor
18/06/2018 3/11/2020 Jyothi Engineering College Assistant Professor
1/1/2018 31/05/2018 Providence College of Engineering, Chengannur,  Assistant Professor
12/06/2017 10/09/2017 Sri Krishna College of Engineering and Technology, Coimbatore Assistant Professor
10/12/2010 10/06/2012 Loop Telecom Pvt. Ltd RF Engineer
5/4/2009 9/12/2010 Wipro Ltd. O&M Engineer
1/10/2008 31/03/2009 3G Wireless Communications Pvt. Ltd. Project Engineer
Areas of Specialization

VLSI Design

Areas of Interest

Microelectronics

VLSI Design

Semiconductor Device Modelling

RESEARCH PUBLICATIONS IN INTERNATIONAL JOURNALS

  1. “Efficiency Enhancement of InGaN MQW LED Using Compositionally Step Graded InGaN Barrier on SiC Substrate” IEEE J. Display Technology, 12(10), (2016), pp 1117-1121. (Impact Factor – 1.925).
  2. “A Modified ABC Model in InGaN MQW LED Using Compositionally Step Graded Alternating Barrier for Efficiency Improvement”, Superlattices and Microstructures (Elsevier) 96, (2016), pp. 155-163. (Impact factor – 2.117).
  3. “Temperature dependant efficiency droop analysis of InGaN MQW Light Emitting Diode with modified ABC Model”, J. Comp. Electronics, (Springer) 15, 1511–1520 (2016). (Impact Factor – 1.104)
  4. “Investigation of Efficiency Enhancement in InGaN MQW LED with Compositionally Step Graded GaN/InAlN/GaN Multi-Layer Barrier” Superlattices and Microstructures, (Elsevier)., 116 (2018), 71-78. (Impact Factor: 2.117).
  5.  “Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications” Superlattices and Microstructures (Elsevier) 78 (2015) 210–223. (Impact Factor: 2.117).
  6. “The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs” Microelectronics Journal (Elsevier) 46 (2015) 1387–1391. (Impact Factor: 0.876).
  7. “Implementation of nanoscale circuits using dual metal gate engineered Nanowire MOSFET with high-k dielectrics for low power applications” Physica E (Elsevier) 83 (2016) 95–100. (Impact Factor: 1.904).
  8. “A New Drain Current Model for Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance” IEEE Trans. Electron Devices, 63(9), (2016), 3782-3789. (Impact Factor – 2.207).
  9. “Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor”, Superlattices and Microstructures (Elsevier), 104, (2017), 470–476. (Impact Factor: 2.117).
  10. “Analysis of nanometer-scale InGaAs/ InAs/ InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications”, Int. J. Electron. Commun. (AEÜ), (Elsevier), 79 (2017), 151–157. (Impact Factor: 0.786).
  11. “Investigation of Breakdown Performance in Lg = 20 nm Novel Asymmetric InP HEMTs for Future High-Speed High-Power Applications”, J. Comp. Electronics, (Springer), (2017), https://doi.org/10.1007/s10825-017-1086-4 (Impact Factor – 1.526)
  12.  “Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application”, Superlattices and Microstructures, (Elsevier), 113 (2018),810-820. (Impact Factor: 2.117).
  13. “Investigation of DC-RF and breakdown behaviour in Lg = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications”, AEUE - International Journal of Electronics and Communications, 2017. (Impact Factor: 1.147).
  14. “Nanoscale High-K Dielectrics For Junctionless Nanowire Transistor For Drain Current Analysis” Journal of Electronic Materials, (Springer), doi.org/10.1007/s11664-018-6075-2, (2018). (Impact Factor: 1.579)
  15. "Analysis of High Efficiency InGaN MQW LEDs Using InGaN Step-Graded Barriers”, J. Nanoelectron. Optoelectron. 13, 939–943 (2018), (Impact Factor: 0.497).
  16. “InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review”, Int. J. Electron. Commun. (AEÜ), 94 (2018) 199–214 (Impact Factor: 2.115).
  17. “Investigation of RF and DC Performance of E-Mode In0.80Ga0.20As/InAs/In0.80Ga0.20As Channel Based DG-HEMTs for Future Submillimetre wave and THz Applications”, IETE Journal of Research, https://doi.org/10.1080/03772063.2018.1553641 (2018) (Impact Factor: 0.829).
  18. “Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications”, Semiconductors volume 52, pages1991–1997 (2018), https://doi.org/10.1134/S1063782618160029.
  19. “Improved RF and DC Performance in AlGaN/GaN HEMT by P-type doping in GaN Buffer for Millimetre-Wave Applications”, Int. J. Electron. Commun. (AEÜ), (2019) (Impact Factor: 2.115).
  20. “A Review of Blue Light Emitting Diodes for Future Solid State Lighting and Visible Light Communication Applications, Superlattices and Microstructures, DOI: https://doi.org/10.1016/j.spmi.2019.106294, (2019) (Impact Factor: 2.384).
  21. "Impact of AlInN back-barrier over AlGaN/GaN MOS-HEMT with HfO2 dielectric using Cubic Spline Interpolation Technique " IEEE Trans. Electron Devices (2020)67(9) 3558-3563., DOI: 10.1109/TED.2020.3010710 (Impact Factor: 2.913).
  22. “A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application”,  Silicon, (2020) https://doi.org/10.1007/s12633-020-00647-3 (Impact Factor: 1.499).
  23. "Optical Grating Techniques for MEMS based Spectrometer -A Review," in IEEE Sensors Journal, (2020) doi: 10.1109/JSEN.2020.3041196.
  24. “Numerical investigation of traps and optical response in III-V nitride quantum LED”, Optical and Quantum Electronics 52(12), (2020). 10.1007/s11082-020-02633-w
  25. “Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS-HEMT using Cubic Spline Interpolation technique” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (2021). https://doi.org/10.1002/jnm.2936
  26. “Physics based modeling of AlGaN/BGaN quantum well based ultra violet light emitting diodes” Optical and Quantum Electronics volume 54, Article number: 168 (2022). https://doi.org/10.1007/s11082-022-03552-8
  27.  “InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research”, Optical and Quantum Electronics, 54(9), 1-15 (2022) https://doi.org/10.1007/s11082-022-04002-1.
  28. “Theoretical Study of TiO2 based UV-VIS Spectrometer Gratings for Assessment of Skin Lesions in Localized Scleroderma”, Optik, 170033(2022) https://doi.org/10.1016/j.ijleo.2022.170033

    Book Chapter

    Prajoon P., Anuja Menokey, “AlGaN/GaN HEMTs for High Power Applications”, D. Nirmal, J.Ajayan, “Handbook for III-V High Electron Mobility Transistor Technologies”, pp. 97-134, CRC Press (2019).

RESEARCH PUBLICATIONS IN INTERNATIONAL CONFERENCES

  1. “Enhancement Mode GaN Based HEMT Using Polarization Engineering Technique” proceedings of IEEE International Conference on Innovations in Information Embedded and Communication Systems ICIIECS’14, Karpagam College of Engineering, Coimbatore, March 2014, Vol 2, pp 208-211.

  2. “Green InGaN/GaN LEDs with n-GaN Interlayer for efficiency droop improvement” Proceeding of IEEE sponsored 3rd International Conference on Devices, Circuits and Systems (ICDCS’16), Karunya University, Coimbatore, pp-216-219, 3 March-2016.

  3. “Design and Simulation of Schottky-Source/Drain GaN/AlGaN HEMTs for Breakdown Voltage Improvemnt” proceedings of IEEE International Conference on Electronics and Communication System ICECS’14, Karpagam College of Engineering, Coimbatore, February 2014 pp 187-189.

  4. “Modelling of HEMT for high power switching application using polarization engineering technique” proceedings of IEEE International Conference on Electronics and Communication System ICECS’14, Karpagam College of Engineering, Coimbatore, February 2014 pp 149-152.

  5. “Effect of quantum well thickness and molar concentration for obtaining different wavelength using AlGaAs/GaAs single quantum well LASER” proceedings of  IEEE International Conference on Electronics and Communication ICECS’15, Karpagam College of Engineering, Coimbatore, Tamil Nadu Vol-3, (2015) pp:1738-1741.

  6. “Impact of Gate Length on the Performance of a Junctionless Dual Metal Transistor with High-k dielectrics”, Proceeding of IEEE sponsored 3rd International Conference on Devices, Circuits and Systems (ICDCS’16), Karunya University, Coimbatore, pp-291-294, 3 March-2016.

  7. “DC Performance analysis of AlGaN/GaN HEMT for future High power applications”, 4th International Conference on Devices, Circuits and Systems (ICDCS), (2018).

  8. “Object detection and Counting using Unsupervised Method”, Third International Conference on Intelligent Computing and Control Syste1ns (ICICCS-2019), Vaigai College of Engineering, May 15-17, 2019 at Madurai, India.

  9. “Luminous power improvement in InGaN V-Shaped Quantum Well LED using CSG on SiC Substrate”, IOP Conf. Series: Materials Science and Engineering 906 (2020) 012011 doi:10.1088/1757-899X/906/1/012011.

  10. “CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics”, 2020 4th International Conference on Electronics, Communication and Aerospace Technology (ICECA), Coimbatore, India, (2020). DOI: 10.1109/ICECA49313.2020.9297448,

  11. “Novel PAPR Reduction in UFMC system for 5G Wireless Networks Using Precoding Algorithm, 2022 International Conference on Wireless Communications Signal Processing and Networking (WiSPNET), 84-88 , IEEE (2022). DOI: 10.1109/WiSPNET54241.2022.9767123.

  12. A Hybrid Feature Extraction Method Using SeaLion Optimization for Meningioma Detection from MRI Brain Image. In: , et al. Innovations in Bio-Inspired Computing and Applications. IBICA 2021. Lecture Notes in Networks and Systems, vol 419. Springer, Cham.(2022) https://doi.org/10.1007/978-3-030-96299-9_4

  13. “Investigation on Impact of GaAs and GaN Blazed Grating for High Performance UV-VIS Spectrometer” 3rd  International Conference on Electronics and Sustainable Communication Systems (ICESC), August 2022.

Sno. Projects Guided Year
1

Title " MODELLING AND SIMULATION OF AlGaN/GaN HEMT FOR GAS SENSING APPLICATIONS"

Students: ANITTA MARIYA V.S, ANJU SIMON E, PADMA PRIYA, PRAVEENA M.P

Short Description: This project mainly focus on a method to detect Hydrogen Sulfide (H2S) gas. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is simulated using Sentaurus TCAD software. The sensing capability to sense the H2S gas is analyzed.

2021
2

Title : "TOP GATED GRAPHENE FIELD EFFECT TRANSISTOR FOR HIGH FREQUENCY PERFORMANCE"

Students : Pavithra, Riya Albert, Sharan Shashidharan

Short Description: Graphene based Field Effect Transistor with high frequency characteristics is designed by using Atlas Silvaco Tcad. Parameters such as Transconductance, maximum cut off frequency, and maximum frequencies of oscillations are to be extracted to prove its high performance.

2020
3

Title : ALGaN\GaN High Electron Mobility Transistor(HEMT) Based Glucose Sensor”

Students: Catherine C Jejo, Athira K, Anu Mariya Vincent, Adrian George

Short Discription: Aims to design and simulate a non generic High-electron-mobility transistor (HEMT) biosensor that  detects glucose. Although there are contemporary HEMT (High Electron Mobility Transistor) based biomolecule sensors,  with careful optimization and manipulation of the cavity length and dielectric constant,  simulation  of a newfangled HEMT based glucose sensor is possible. This work aims to unveil the structure and simulation of the proposed HEMT glucose sensor.

2020
4

Title " OBJECT  DETECTION  AND COUNTING  USING Lie-ALGEBRA"

Student : JACKSON JOHNSON (PG)

Short Description: Differentiating and finding similar patterns of images from single image frame source is the basic elemental task in this project. Various algorithms about object identification, shape identification, color identification, and object counting is analyzed. The results are compared to obtain a new unsupervised method developed with the concept of lie Algebra shape detection. Main advantage of proposed method is no training data is required for the process

2019